STH110N10F7-6
MOSFET N-CH 100V 110A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH110N10F7-6 is a 100V N-Channel MOSFET from the STripFET™ VII series, featuring DeepGATE™ technology. This device is housed in an H2PAK-6 package (TO-263-7, D2PAK) for surface mounting. It offers a continuous drain current of 110A at 25°C (Tc) with a maximum power dissipation of 150W (Tc). The Rds On is specified at a maximum of 6.5mOhm at 55A and 10V drive voltage. Key parameters include a gate charge of 72 nC (Max) @ 10V and input capacitance of 5117 pF (Max) @ 50V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for high-power switching applications in industries such as automotive and industrial power management.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5117 pF @ 50 V |
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