STH110N10F7-2
MOSFET N CH 100V 110A H2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH110N10F7-2 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 110A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The STH110N10F7-2 offers a low on-resistance (Rds On) of 6.5mOhm at 55A and 10V gate drive. Key parameters include a gate charge (Qg) of 72 nC (max) at 10V and input capacitance (Ciss) of 5117 pF (max) at 50V. This component is housed in an H2Pak-2 surface mount package (TO-263-3, D2PAK) and is supplied on tape and reel. It is suitable for applications in power supply, automotive, and industrial sectors requiring high current handling and efficient switching performance. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5117 pF @ 50 V |
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