STFW6N120K3
MOSFET N-CH 1200V 6A ISOWATTManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFW6N120K3 is an N-Channel SuperMESH3™ Power MOSFET designed for high-voltage applications. This device features a drain-to-source breakdown voltage of 1200 V and a continuous drain current rating of 6 A at 25°C (Tc). With a maximum power dissipation of 63 W (Tc) and a low on-resistance of 2.4 Ohms at 2.5 A and 10 V, this MOSFET is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 34 nC at 10 V and input capacitance (Ciss) of 1050 pF at 100 V. The STFW6N120K3 is housed in a TO-3PF through-hole package, facilitating ease of integration in power supply designs, industrial automation, and electric vehicle applications. It operates across an extended temperature range of -55°C to 150°C.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 100 V |