STFW45N65M5
MOSFET N-CH 650V 35A ISOWATTManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STFW45N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This through-hole device features a 650V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Tc). With a maximum on-resistance (Rds On) of 78mOhm at 17.5A and 10V Vgs, it offers efficient switching. The device has a maximum power dissipation of 57W (Tc) and an operating junction temperature of 150°C. Key parameters include a gate charge (Qg) of 82 nC @ 10V and input capacitance (Ciss) of 3470 pF @ 100V. The STFW45N65M5 is housed in a TO-3PF package. This component is utilized in applications such as power factor correction (PFC) and switched-mode power supplies (SMPS).
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 100 V |
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