STFW42N60M2-EP
MOSFET N-CH 600V 34A ISOWATTManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STFW42N60M2-EP is a 600V N-Channel Power MOSFET from the MDmesh™ M2 series. This device features a continuous drain current of 34A (Tc) and a maximum power dissipation of 63W (Tc). The Rds(On) is specified at 87mOhm at 17A and 10V, with a gate charge (Qg) of 55 nC at 10V. Input capacitance (Ciss) is a maximum of 2370 pF at 100V. The MOSFET is housed in a TO-3PF (TO-3P-3 Full Pack) through-hole package. It operates within a temperature range of -55°C to 150°C (TJ). The STFW42N60M2-EP is suitable for applications in power factor correction, switch mode power supplies, and lighting.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 100 V |
Request a Quote
Clients Also Buy
STB33N65M2
MOSFET N-CH 650V 24A D2PAK
STN6N60M2
MOSFET N-CH 600V 5.5A SOT223-2
STD16N65M2
MOSFET N-CH 650V 11A DPAK
