STFW24N60M2
MOSFET N-CH 600V 18A TO3PFManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFW24N60M2 is an N-Channel Power MOSFET from the MDmesh™ II Plus series, designed for high-efficiency power conversion applications. This through-hole component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C (Tc). The device offers a low on-resistance of 190mOhm maximum at 9A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 48W (Tc), it is suitable for demanding power supply designs, industrial automation, and automotive electronics. The MOSFET exhibits a gate charge (Qg) of 29nC maximum at 10V and an input capacitance (Ciss) of 1060pF maximum at 100V. Packaged in a TO-3PF, this component supports operation across a wide temperature range of -55°C to 150°C.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V |
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