STFV4N150
MOSFET N-CH 1500V 4A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFV4N150 is an N-Channel PowerMESH™ MOSFET designed for high-voltage applications. This device offers a Drain-Source Voltage (Vdss) of 1500 V and a continuous Drain Current (Id) of 4A at 25°C. Key parameters include a maximum Rds On of 7 Ohm at 2A and 10V, and a Gate Charge (Qg) of 50 nC at 10V. Input capacitance (Ciss) is specified at 1300 pF at 25V.
The STFV4N150 features a TO-220-3 Full Pack, Isolated Tab package, suitable for through-hole mounting. It has a maximum power dissipation of 40W (Tc) and an operating junction temperature of 150°C. This component is utilized in power factor correction, switch-mode power supplies, and high-voltage industrial applications.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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