STFV3N150
MOSFET N-CH 1500V 2.5A TO220-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFV3N150 is an N-Channel Power MOSFET from the PowerMESH™ series. This component features a Drain-Source Voltage (Vdss) of 1500 V and a continuous Drain Current (Id) of 2.5 A at 25°C (Tc). The device offers a maximum Rds On of 9 Ohms at 1.3 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 29.3 nC maximum at 10 V and Input Capacitance (Ciss) of 939 pF maximum at 25 V. The STFV3N150 has a power dissipation capability of 30 W (Tc) and an operating temperature range up to 150°C (TJ). It is packaged in a TO-220-3 Full Pack, Isolated Tab, designed for through-hole mounting. This MOSFET is suitable for high-voltage applications in power supply, motor control, and lighting industries.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 29.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 939 pF @ 25 V |
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