STFU9N65M2
MOSFET N-CH 650V 5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFU9N65M2 is a 650V N-Channel Power MOSFET from the MDmesh™ M2 series. This device features a continuous drain current rating of 5A at 25°C (Tc) and a maximum power dissipation of 20W (Tc). The Rds(On) is specified at 900mOhm maximum at 2.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 315 pF at 100V. It operates with a gate-source voltage (Vgs) range of ±25V and a threshold voltage (Vgs(th)) of 4V at 250µA. The STFU9N65M2 is housed in a TO-220FP package and is available on Tape & Reel (TR). This component is suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching across various industrial sectors.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V |