STFU8N60DM2
MOSFET N-CH 600V 12A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFU8N60DM2 is an N-Channel Power MOSFET from the MDmesh™ series, featuring a 600V drain-to-source voltage rating. This component offers a continuous drain current of 12A (Tc) at 25°C and a maximum power dissipation of 25W (Tc). With a typical Rds(on) of 295mOhm at 6A and 10V, it is designed for efficient power switching applications. The device has a gate charge (Qg) of 20 nC (max) at 10V and an input capacitance (Ciss) of 800 pF (max) at 100V. Packaged in a TO-220FP for through-hole mounting, this MOSFET is suitable for use in industrial power supplies, lighting, and consumer electronics. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 100 V |
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