STFU6N65
MOSFET N-CH 650V 4A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFU6N65 is a 650V N-Channel MOSFET designed for high-voltage applications. This device features a continuous drain current of 4A at 25°C (Tc) and a low on-resistance of 2.7 Ohms maximum at 2A, 10V. The STFU6N65 is housed in a TO-220FP package, a through-hole mounting type commonly utilized in power switching applications. Key electrical parameters include a gate-source voltage (Vgs) tolerance of ±30V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA. With a maximum power dissipation of 77W at 25°C (Tc), this MOSFET is suitable for use in power supplies, lighting, and industrial motor control systems. The input capacitance (Ciss) is specified at 463pF maximum at 25V. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 620mW (Ta), 77W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 463 pF @ 25 V |
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