STFU25N60M2-EP
MOSFET N-CH 600V 18A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFU25N60M2-EP is an N-Channel Power MOSFET from the MDmesh™ M2 series. This device features a 600 V breakdown voltage and a continuous drain current of 18 A at 25°C (Tc). The STFU25N60M2-EP offers a low on-resistance of 188 mOhm maximum at 9 A, 10 V, contributing to efficient power conversion. With a gate charge of 29 nC (max) at 10 V and input capacitance of 1090 pF (max) at 100 V, the device is optimized for high-frequency switching applications. It is packaged in a TO-220FP (TO-220-3 Full Pack) through-hole configuration, enabling straightforward board mounting. The maximum power dissipation is rated at 30 W (Tc). This component is suitable for applications in industrial power supplies, lighting, and power factor correction circuits.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 188mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 100 V |
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