STFU16N65M2
MOSFET N-CH 650V 11A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFU16N65M2 is an N-Channel Power MOSFET from the MDmesh™ M2 series. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 11A at 25°C (Tc). With a maximum on-resistance (Rds On) of 360mOhm at 5.5A and 10V gate drive, it offers efficient switching performance. The device is packaged in a TO-220FP through-hole configuration and dissipates a maximum of 25W (Tc). Key parameters include a gate charge (Qg) of 19.5 nC at 10V and input capacitance (Ciss) of 718 pF at 100V. This MOSFET is suitable for applications in power factor correction (PFC), switch mode power supplies (SMPS), and general-purpose power switching. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 718 pF @ 100 V |
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