STFU15NM65N
MOSFET N-CH 650V 12A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFU15NM65N is an N-Channel Power MOSFET from the MDmesh™ II series, designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 12 A at 25°C. Key electrical characteristics include a maximum on-resistance (Rds On) of 380 mOhm at 6 A and 10 V, and a gate charge (Qg) of 33.3 nC at 10 V. The device operates with a drive voltage of 10 V for optimal Rds On performance and has a maximum gate-source voltage (Vgs) of ±25 V. The input capacitance (Ciss) is rated at a maximum of 983 pF at 50 V. This through-hole component is housed in a TO-220FP package, offering a maximum power dissipation of 30 W at 150°C (TJ). The STFU15NM65N is suitable for use in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 983 pF @ 50 V |
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