STFI9N80K5
MOSFET N-CH 800V 7A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI9N80K5 is an N-Channel Power MOSFET from the MDmesh™ series. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain current (Id) of 7 A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 900 mOhm at 3.5 A and 10 V Vgs. Designed for through-hole mounting, it is housed in a TO-281 (I2PAKFP) package, also known as TO-262-3 Full Pack, I2PAK. With a maximum power dissipation of 25 W (Tc) and a gate charge of 12 nC at 10 V, this MOSFET is suitable for applications in power supplies, lighting, and industrial automation. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 100 V |
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