STFI8N80K5
MOSFET N-CH 800V 6A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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This STMicroelectronics SuperMESH5™ N-Channel Power MOSFET, part number STFI8N80K5, offers an 800V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 950mOhm at 3A and 10V Vgs, it provides efficient switching characteristics. The device features a gate charge (Qg) of 16.5 nC at 10V and an input capacitance (Ciss) of 450 pF at 100V. Dissipation is rated at 25W (Tc) with a maximum junction temperature of 150°C. The STFI8N80K5 is housed in a TO-281 (I2PAKFP) through-hole package, suitable for applications in power supplies, lighting, and industrial motor control. It supports a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 100µA.
Additional Information
Series: SuperMESH5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 100 V |
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