STFI7N80K5
MOSFET N-CH 800V 6A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFI7N80K5 is an N-Channel Power MOSFET from the SuperMESH5™ series, featuring an 800V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Tc). This component offers a maximum on-resistance (Rds On) of 1.2 Ohms at 3A and 10V Vgs. With a maximum power dissipation of 25W (Tc), it is housed in an I2PAKFP (TO-281) through-hole package. Key characteristics include a gate charge (Qg) of 13.4 nC at 10V and input capacitance (Ciss) of 360 pF at 100V. The STFI7N80K5 is suitable for applications in power factor correction (PFC), switch mode power supplies (SMPS), and general-purpose high voltage conversion across various industrial sectors.
Additional Information
Series: SuperMESH5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | I2PAKFP (TO-281) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 100 V |
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