STFI7LN80K5
MOSFET N-CH 800V 5A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI7LN80K5 is an N-Channel MOSFET from the MDmesh™ series, featuring an 800V drain-source breakdown voltage and a continuous drain current of 5A at 25°C. This device offers a maximum on-resistance of 1.15 Ohms at 2.5A and 10V Vgs, with a gate charge of 12 nC at 10V. The input capacitance (Ciss) is a maximum of 270 pF at 100V. Designed for through-hole mounting, it is housed in a TO-281 (I2PAKFP) package, also known as TO-262-3 Full Pack. With a maximum power dissipation of 25W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power supply, lighting, and industrial sectors.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 100 V |
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