STFI6N80K5
MOSFET N-CH 800V 4.5A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI6N80K5, an N-Channel SuperMESH5™ MOSFET, offers 800V drain-source voltage and 4.5A continuous drain current at 25°C (Tc). This device features a maximum on-resistance of 1.6 Ohms at 2A and 10V gate-source voltage. With a gate charge of 13 nC (max) at 10V and input capacitance of 270 pF (max) at 100V, it is designed for efficient switching. The STFI6N80K5 is packaged in a TO-281 (I2PAKFP) through-hole configuration, with a maximum power dissipation of 25W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch mode power supplies, and lighting.
Additional Information
Series: SuperMESH5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 100 V |
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