STFI6N65K3
MOSFET N-CH 650V 5.4A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI6N65K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-voltage applications. This component features a 650V breakdown voltage (Vdss) and a continuous drain current (Id) of 5.4A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 1.3 Ohm maximum at 2.7A and 10V (Vgs). Key parameters include a typical gate charge (Qg) of 33 nC at 10V and input capacitance (Ciss) of 880 pF at 50V. With a maximum power dissipation of 30W (Tc), it is suitable for operation up to 150°C (TJ). The STFI6N65K3 is housed in a TO-281 (I2PAKFP) package, a through-hole mounting type. This MOSFET is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 50 V |
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