STFI6N62K3
MOSFET N CH 620V 5.5A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ N-Channel Power MOSFET, STFI6N62K3, features a 620V drain-source breakdown voltage and a continuous drain current of 5.5A at 25°C (Tc). This device offers a low on-resistance of 1.2 Ohm maximum at 2.8A and 10V Vgs, with a typical gate charge of 34 nC at 10V. The input capacitance (Ciss) is 875 pF maximum at 50V. Designed for through-hole mounting, it is housed in a TO-281 (I2PAKFP) package, also known as TO-262-3 Full Pack. With a maximum power dissipation of 30W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 50 V |
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