STFI5N95K3
MOSFET N-CH 950V 4A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ N-Channel Power MOSFET, STFI5N95K3, offers a 950V drain-to-source breakdown voltage and a continuous drain current capability of 4A at 25°C (Tc). This device features a low on-resistance of 3.5 Ohms at 2A, 10V (Vgs), and a gate charge of 19 nC maximum at 10V. The input capacitance (Ciss) is 460 pF maximum at 25V. Designed for through-hole mounting, it utilizes the TO-281 (I2PAKFP) package, also known as TO-262-3 Full Pack. With a maximum power dissipation of 25W (Tc), this MOSFET is suitable for applications in high-voltage power systems, including power supplies and industrial motor control. The operating temperature range is -55°C to 150°C (TJ), with a ±30V maximum gate-source voltage and a 5V threshold voltage at 100µA.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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