STFI4N62K3
MOSFET N CH 620V 3.8A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI4N62K3 is a SuperMESH3™ N-Channel Power MOSFET in a TO-281 (I2PAKFP) package. This device offers a 620V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2 Ohms at 1.9A and 10V Vgs, it is suitable for applications requiring efficient switching. The device features a gate charge (Qg) of 22 nC at 10V and an input capacitance (Ciss) of 550 pF at 50V. The maximum power dissipation is rated at 25W (Tc). This MOSFET is engineered for high-voltage applications and is commonly found in power supply units, lighting, and industrial motor control systems. It operates within a temperature range of 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V |
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