STFI40N60M2
MOSFET N-CH 600V 34A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFI40N60M2 is an N-Channel Power MOSFET from the MDmesh™ II Plus series. This device features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 34 A at 25°C (Tc). With a low on-resistance (Rds On) of 88 mOhm at 17 A and 10 V Vgs, it offers efficient power handling capabilities, rated at 40 W (Tc) maximum power dissipation. The MOSFET utilizes Metal Oxide technology and has a gate charge (Qg) of 57 nC at 10 V, with input capacitance (Ciss) up to 2500 pF at 100 V Vds. It is housed in a TO-262-3 Full Pack, I2PAK (TO-281 I2PAKFP) package for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ), and the maximum gate-source voltage (Vgs) is ±25V. This component is commonly employed in power factor correction (PFC) and switch-mode power supply (SMPS) applications across various industrial sectors.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
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