STFI34NM60N
MOSFET N-CH 600V 29A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI34NM60N, an N-Channel Power MOSFET from the MDmesh™ II series, offers a 600V drain-source voltage and a continuous drain current of 29A at 25°C (Tc). This device features a maximum on-resistance of 105mOhm at 14.5A and 10V, with a typical gate charge of 84 nC at 10V. The TO-281 (I2PAKFP) package, a through-hole mounting type, dissipates up to 40W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). Key parameters include input capacitance (Ciss) of 2722 pF at 100V and a gate-source voltage (Vgs) tolerance of ±25V. This component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2722 pF @ 100 V |
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