STFI34N65M5
MOSFET N CH 650V 28A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI34N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 28 A at 25°C (Tc). With a maximum Rds On of 110 mOhm at 14 A and 10 V, it offers efficient power handling. The device is packaged in a TO-281 (I2PAKFP) through-hole configuration, rated for a maximum power dissipation of 35 W (Tc) and an operating temperature up to 150°C (TJ). Key parameters include a gate charge (Qg) of 62.5 nC at 10 V and input capacitance (Ciss) of 2700 pF at 100 V. This MOSFET is suitable for applications in power supplies, solar inverters, and electric vehicle charging systems.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 62.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 100 V |
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