STFI31N65M5
MOSFET N CH 650V 22A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFI31N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series, designed for high-voltage switching applications. This device features a 650 V drain-source voltage (Vdss) and a continuous drain current of 22 A at 25°C (Tc), with a maximum power dissipation of 30 W (Tc). The on-resistance (Rds On) is specified at a maximum of 148 mOhm at 11 A and 10 V Vgs. Key parameters include a gate charge (Qg) of 45 nC and input capacitance (Ciss) of 1865 pF. The MOSFET is housed in a TO-281 (I2PAKFP) through-hole package, suitable for demanding thermal management. This component is frequently utilized in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and industrial motor control applications.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 148mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1865 pF @ 100 V |
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