STFI28N60M2
MOSFET N-CH 600V 22A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFI28N60M2 is an N-Channel Power MOSFET from the MDmesh™ II Plus series. This component features a 600V drain-source breakdown voltage and a continuous drain current capability of 22A at 25°C (Tc). The device offers a maximum on-resistance of 150mOhm at 11A and 10V Vgs. Key parameters include a typical gate charge of 36 nC at 10V and input capacitance of 1440 pF at 100V. Designed for through-hole mounting, it utilizes the TO-262-3 (I2PAKFP) package, allowing for a maximum power dissipation of 30W at 25°C (Tc). This MOSFET is suitable for applications requiring high voltage and current handling, including power supplies, motor control, and lighting. The maximum operating junction temperature is 150°C, with a ±25V maximum gate-source voltage.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 100 V |
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