STFI26NM60N
MOSFET N-CH 600V 20A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI26NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 165mOhm maximum at 10A and 10V Vgs. With a maximum power dissipation of 35W (Tc), it is suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 60nC maximum at 10V and input capacitance (Ciss) of 1800pF maximum at 50V. The STFI26NM60N is packaged in a TO-281 (I2PAKFP) through-hole configuration, designed for robust thermal performance. This MOSFET is utilized across various industrial sectors, including power supplies, motor control, and lighting applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
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