STFI26N60M2
MOSFET N-CH 600V 20A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STFI26N60M2 is an N-Channel Power MOSFET from the MDmesh™ series. This component offers a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C (Tc). The Rds On is specified at a maximum of 165mOhm at 11A with a 10V Vgs. Designed for through-hole mounting, it utilizes the TO-281 (I2PAKFP) package, also known as TO-262-3 Full Pack, I2PAK. With a maximum power dissipation of 30W (Tc) and an operating temperature range from -55°C to 150°C (TJ), this device is suitable for applications in power supplies, lighting, and industrial automation. The gate-source voltage (Vgs) tolerance is ±25V, with a threshold voltage (Vgs(th)) of 4V at 250µA.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
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