STFI260N6F6
MOSFET N-CH 60V 80A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI260N6F6 is an N-Channel STripFET™ VI DeepGATE™ Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage and a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 41.7W (Tc). The low on-resistance of 3mOhm at 60A and 10V gate drive voltage, coupled with a typical gate charge of 183 nC, ensures efficient switching performance. It is housed in an I2PAKFP (TO-281) package, a full pack TO-262-3 variant, suitable for through-hole mounting. With an operating temperature range of -55°C to 175°C (TJ), this MOSFET is well-suited for use in automotive systems, industrial power supplies, and high-efficiency power conversion circuits.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAKFP (TO-281) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11400 pF @ 25 V |
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