STFI24NM60N
MOSFET N-CH 600V 17A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFI24NM60N is a 600V N-Channel Power MOSFET from the MDmesh™ II series. This device offers a continuous drain current of 17A (Tc) and a maximum power dissipation of 30W (Tc). Key electrical characteristics include a Drain-Source Voltage (Vdss) of 600V, a typical Rds On of 190mOhm at 8A, 10V, and a gate charge (Qg) of 46 nC at 10V. The input capacitance (Ciss) is rated at 1400 pF at 50V. This component is housed in a TO-281 (I2PAKFP) package, designed for through-hole mounting. Applications for this MOSFET include power factor correction, switch mode power supplies, and general-purpose power switching in industrial and consumer electronics. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 50 V |
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