STFI20N65M5
MOSFET N CH 650V 18A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STFI20N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 18 A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 130 W (Tc) and a low on-resistance of 190 mOhm at 9 A and 10 V gate drive, it is engineered for efficient power conversion. The device has a typical Gate Charge (Qg) of 45 nC and an Input Capacitance (Ciss) of 1345 pF at 100 V. The STFI20N65M5 is housed in a TO-281 (I2PAKFP) package, suitable for through-hole mounting. It operates at junction temperatures up to 150°C and is commonly utilized in power factor correction (PFC) and switch-mode power supplies (SMPS) across industrial and computing applications.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1345 pF @ 100 V |
Request a Quote
Clients Also Buy
STD18N55M5
MOSFET N-CH 550V 16A DPAK
STD18N65M5
MOSFET N-CH 650V 15A DPAK
STF45N65M5
MOSFET N-CH 650V 35A TO220FP
