STFI15N95K5
MOSFET N-CH 950V 7.5A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFI15N95K5 is an N-Channel Power MOSFET from the MDmesh™ K5 series. This device features a 950V drain-source breakdown voltage and a continuous drain current capability of 7.5A at 25°C (Ta). It offers a low on-resistance of 500mOhm maximum at 5.5A and 10V gate-source voltage. The MOSFET is housed in a TO-281 (I2PAKFP) package, suitable for through-hole mounting. Key electrical characteristics include a gate charge of 30 nC maximum at 10V Vgs and an input capacitance of 855 pF maximum at 10V Vds. The operating junction temperature range is -55°C to 150°C. This component finds application in high-voltage power conversion systems within the industrial and lighting sectors.
Additional Information
Series: MDmesh™ K5RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 855 pF @ 10 V |
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