STFI15N65M5
MOSFET N CH 650V 11A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI15N65M5 is a 650V N-channel power MOSFET from the MDmesh™ V series. This component features a continuous drain current (Id) of 11A at 25°C and a maximum power dissipation of 30W (Tc). The on-resistance (Rds On) is specified at 340mOhm maximum at 5.5A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 22 nC maximum at 10V and an input capacitance (Ciss) of 816 pF maximum at 100V. The device operates at a junction temperature up to 150°C and has a maximum gate-source voltage of ±25V. It is supplied in a TO-281 (I2PAKFP) through-hole package, also known as TO-262-3 Full Pack, I2PAK. This component is suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching across various industrial sectors.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 816 pF @ 100 V |
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