STFI15N60M2-EP
MOSFET N-CH 600V 11A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI15N60M2-EP is an N-Channel Power MOSFET from the MDmesh™ M2 series, designed for demanding applications. This device features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 25W (Tc). The STFI15N60M2-EP offers a low on-resistance (Rds On) of 378mOhm at 5.5A and 10V, facilitating efficient power transfer. It is packaged in an I2PAKFP (TO-281) through-hole style, providing robust thermal performance. Key parameters include a gate charge (Qg) of 17 nC at 10V and input capacitance (Ciss) of 590 pF at 100V. This component is suitable for use in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 378mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAKFP (TO-281) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 100 V |
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