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STFI14N80K5

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STFI14N80K5

MOSFET N-CH 800V 12A I2PAKFP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STFI14N80K5 is an N-Channel MOSFET from the MDmesh™ K5 series. This device features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 12A at 25°C (Tc). The Rds On is specified at a maximum of 445mOhm at 6A and 10V gate drive voltage. Key parameters include a gate charge (Qg) of 22 nC and input capacitance (Ciss) of 620 pF, both measured at their respective test conditions. The device offers a maximum power dissipation of 30W (Tc) and an operating temperature range of -55°C to 150°C (TJ). Packaged in a TO-281 (I2PAKFP) configuration for through-hole mounting, this MOSFET is suitable for applications in power factor correction, switch mode power supplies, and general-purpose power switching.

Additional Information

Series: MDmesh™ K5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Full Pack, I2PAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs445mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id5V @ 100µA
Supplier Device PackageTO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 100 V

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