STFI13NM60N
MOSFET N-CH 600V 11A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFI13NM60N is an N-Channel MOSFET from the MDmesh™ II series, designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 11 A at 25°C. With a maximum On-Resistance (Rds On) of 360mOhm at 5.5A and 10V, it offers low conduction losses. The device boasts a low gate charge of 30 nC at 10 V and an input capacitance (Ciss) of 790 pF at 50 V, contributing to efficient switching performance. Power dissipation is rated at 25 W (Tc). The STFI13NM60N is packaged in a TO-281 (I2PAKFP) through-hole package, suitable for applications in power supplies, industrial automation, and renewable energy systems. The operating temperature range is up to 150°C (TJ) with a maximum gate-source voltage of ±25V.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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