STFI13NK60Z
MOSFET N-CH 600V 13A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI13NK60Z is an N-Channel SuperMESH™ MOSFET designed for high voltage applications. This device features a 600V drain-source voltage and can handle a continuous drain current of 13A at 25°C (Tc) with a maximum power dissipation of 35W (Tc). The STFI13NK60Z offers a low on-resistance of 550mOhm maximum at 4.5A and 10V gate-source voltage. Key characteristics include a gate charge of 92 nC at 10V and input capacitance of 2030 pF at 25V. The MOSFET utilizes TO-281 (I2PAKFP) packaging for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2030 pF @ 25 V |
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