STFI13N95K3
MOSFET N CH 950V 10A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI13N95K3 is an N-Channel Power MOSFET from the SuperMESH3™ series. This component features a Drain-to-Source Voltage (Vdss) of 950 V and a continuous Drain Current (Id) of 10 A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 850 mOhm at 5 A and 10 V. With a maximum power dissipation of 40 W (Tc), it is designed for high-voltage applications. The STFI13N95K3 utilizes a TO-281 (I2PAKFP) package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 51 nC at 10 V and input capacitance (Ciss) of 1620 pF at 100 V. This MOSFET is employed in industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
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