STFI13N80K5
MOSFET N-CH 800V 12A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI13N80K5 is an 800V N-Channel Power MOSFET from the MDmesh™ K5 series. This device offers a continuous drain current of 12A (Tc) with a maximum power dissipation of 35W (Tc). Key electrical specifications include a drain-source voltage (Vdss) of 800V and a maximum on-resistance (Rds On) of 450mOhm at 6A and 10V gate-source voltage. The MOSFET features a gate charge (Qg) of 29 nC (Max) at 10V and an input capacitance (Ciss) of 870 pF (Max) at 100V. Designed for through-hole mounting, it is housed in a TO-281 (I2PAKFP) package. This component is suitable for applications in high-voltage power supplies, lighting, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ K5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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