STFI13N65M2
MOSFET N-CH 650V 10A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI13N65M2 is a 650V N-Channel Power MOSFET from the MDmesh™ M2 series, designed for high-efficiency power switching applications. This device features a continuous drain current capability of 10A at 25°C (Tc) and a maximum power dissipation of 25W (Tc). The STFI13N65M2 offers a low Rds(on) of 430mOhm at 5A and 10V, with a gate charge (Qg) of 17 nC at 10V. Its input capacitance (Ciss) is specified at a maximum of 590 pF at 100V. The MOSFET is housed in a TO-281 (I2PAKFP) through-hole package, enabling efficient heat dissipation and robust mounting. Key parameters include a Vgs(th) of 4V at 250µA and a maximum Vgs of ±25V. This component is suitable for use in power factor correction (PFC), switch mode power supplies (SMPS), and industrial power applications.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 100 V |
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