STFI13N60M2
MOSFET N-CH 600V 11A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI13N60M2 is an N-Channel Power MOSFET from the MDmesh™ II Plus series. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 11 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 380 mOhm at 5.5 A and 10 V. Key parameters include a gate charge (Qg) of 17 nC at 10 V and input capacitance (Ciss) of 580 pF at 100 V. The device offers a maximum power dissipation of 25 W (Tc) and is available in a TO-281 (I2PAKFP) through-hole package. This component is suitable for applications in power factor correction, switch mode power supplies, and lighting. It operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) range of ±25 V.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 100 V |
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