STFI130N10F3
MOSFET N-CH 100V 46A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ III STFI130N10F3 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 46 A at 25°C (Tc). The STFI130N10F3 boasts a low on-resistance (Rds On) of 9.6 mOhm at 23 A and 10 V, contributing to efficient power handling. With a maximum power dissipation of 35 W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for high-power switching and motor control applications. The MOSFET is housed in a TO-281 (I2PAKFP) package, facilitating through-hole mounting. Key parameters include an input capacitance (Ciss) of 3305 pF at 25 V and a gate charge (Qg) of 57 nC at 10 V. This device finds utility in industrial automation and power supply designs.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3305 pF @ 25 V |
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