STFI12N60M2
MOSFET N-CH 600V 9A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STFI12N60M2 is an N-Channel Power MOSFET from the MDmesh™ M2 series. This component offers a 600 V drain-to-source breakdown voltage and a continuous drain current of 9A at 25°C (Tc). Key electrical characteristics include a maximum Rds(on) of 450 mOhm at 4.5A and 10V, with a gate charge (Qg) of 16 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 538 pF at 100 V. Designed for efficient power conversion, this device features a maximum power dissipation of 25W (Tc). The STFI12N60M2 is supplied in a TO-281 (I2PAKFP) through-hole package, suitable for applications in power supplies, industrial automation, and solar inverters. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 538 pF @ 100 V |
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