STFI11N65M2
MOSFET N-CH 650V 7A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI11N65M2 is an N-Channel Power MOSFET from the MDmesh™ II Plus series. This device features a 650 V breakdown voltage and a continuous drain current of 7 A at 25°C (Tc). The STFI11N65M2 offers a low on-resistance of 670 mOhm maximum at 3.5 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 12.5 nC maximum at 10 V and an input capacitance (Ciss) of 410 pF maximum at 100 V. The device is housed in a TO-281 (I2PAKFP) package suitable for through-hole mounting and operates at a maximum junction temperature of 150°C. With a maximum power dissipation of 25 W (Tc), this MOSFET is designed for applications in power factor correction, switch mode power supplies, and general-purpose high voltage switching.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 670mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 100 V |
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