STFI11N60M2-EP
MOSFET N-CH 600V I2PAK-FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI11N60M2-EP is a 600V N-Channel Power MOSFET from the MDmesh™ series. This device features a continuous drain current of 7.5A (Tc) and a maximum power dissipation of 25W (Tc). It offers a low on-resistance of 595mOhm at 3.75A and 10V Vgs. Key parameters include a gate charge of 12.4 nC @ 10V and input capacitance of 390 pF @ 100V. The STFI11N60M2-EP is housed in an I2PAKFP (TO-281) package with a through-hole mounting type, suitable for operation across a wide temperature range of -55°C to 150°C. This component is utilized in applications such as power supplies and industrial motor control.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 595mOhm @ 3.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | I2PAKFP (TO-281) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 100 V |
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