STFI10NK60Z
MOSFET N-CH 600V 10A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STFI10NK60Z is a SuperMESH™ series N-Channel Power MOSFET designed for high-voltage switching applications. This device features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 10 A at 25°C (Tc), with a maximum power dissipation of 35 W (Tc). The STFI10NK60Z has a typical Rds On of 750 mOhm at 4.5 A and 10 V, and a gate charge (Qg) of 70 nC at 10 V. It is packaged in a TO-281 (I2PAKFP) through-hole format, facilitating robust mounting. Key electrical characteristics include an input capacitance (Ciss) of 1370 pF at 25 V and a gate threshold voltage (Vgs(th)) of 4.5 V at 250 µA. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in power supply units, industrial automation, and renewable energy systems.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 25 V |
Request a Quote
Clients Also Buy
STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
