STFI10N65K3
MOSFET N-CH 650V 10A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STFI10N65K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-voltage applications. This device features a 650 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10 A at 25°C (Tc). The STFI10N65K3 offers a maximum on-resistance (Rds On) of 1 Ohm at 3.6 A and 10 Vgs. With a maximum power dissipation of 35 W (Tc), it is suitable for use in power factor correction (PFC) circuits, switch mode power supplies (SMPS), and industrial power applications. The component utilizes a TO-281 (I2PAKFP) package for through-hole mounting, with a maximum junction temperature of 150°C. Key parameters include a gate charge (Qg) of 42 nC @ 10 V and input capacitance (Ciss) of 1180 pF @ 25 V.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
Request a Quote
Clients Also Buy
STQ2LN60K3-AP
MOSFET N-CH 600V 600MA TO92-3
STD3N62K3
MOSFET N-CH 620V 2.7A DPAK
STP5NK100Z
MOSFET N-CH 1000V 3.5A TO220AB
