STFI10N62K3
MOSFET N CH 620V 8.4A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ STFI10N62K3 is an N-channel power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 8.4A at 25°C (Tc). The low on-resistance (Rds On) of 750mOhm at 4A and 10V drive voltage, combined with a maximum power dissipation of 30W (Tc), makes it suitable for demanding power conversion tasks. The device exhibits typical input capacitance (Ciss) of 1250pF at 50V and gate charge (Qg) of 42nC at 10V. It is packaged in a TO-281 (I2PAKFP) through-hole package and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industries such as industrial power supplies and consumer electronics.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
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